| PART |
Description |
Maker |
| IRF5802 IRF5802TR |
150V Single N-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
Power MOSFET(Vdss=150V, Id=0.9A)
Power MOSFET(Vdss=150V/ Id=0.9A)
0.9 A, 150 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET
|
IRF[International Rectifier]
|
| IRF5Y6215CM |
-150V Single P-Channel Hi-Rel MOSFET in a TO-257AA package
POWER MOSFET P-CHANNEL(Vdss=-150V, Rds(on)=0.29ohm, Id=-11A)
THRU-HOLE (TO-257AA) 150V, P-CHANNEL
POWER MOSFET P-CHANNEL(Vdss=-150V Rds(on)=0.29ohm Id=-11A)
|
IRF[International Rectifier]
|
| IRFB61N15D |
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=150V/ Rds(on)max=0.032ohm/ Id=50A)
|
International Rectifier
|
| IRFPS3815 |
150V Single N-Channel HEXFET Power MOSFET in a Super 247 (TO-274AA) package
Power MOSFET(Vdss=150V, Rds(on)=0.015ohm, Id=105A)
|
IRF[International Rectifier]
|
| FDD2582 FDD2582NL |
N-Channel PowerTrench MOSFET 150V, 21A, 0.066 Ohm 3.7 A, 150 V, 0.066 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
N-Channel PowerTrench MOSFET 150V, 21A, 66m
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IRFP243R IRFF122R IRFF123R IRF621R IRFP140R IRFF12 |
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 20A I(D) | TO-247
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 5A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 5A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 5A I(D) | TO-220AB
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 31A I(D) | TO-247
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 6A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 8A I(D) | TO-205AF 晶体管| MOSFET的| N沟道| 80V的五（巴西）直| 8A条（丁）|05AF
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 4.9A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 4.9AI（四）| TO - 220AB现有
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 1A I(D) | TO-250VAR 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 1A条（丁）|50VAR
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 28A I(D) | TO-204AE 晶体管| MOSFET的| N沟道| 80V的五（巴西）直| 28A条（丁）|04AE
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 600MA I(D) | TO-250VAR 晶体管| MOSFET的| N沟道| 150伏五（巴西）直| 600毫安（丁）|50VAR
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 25A I(D) | TO-204AE 晶体管| MOSFET的| N沟道| 100V的五（巴西）直|5A条（丁）|04AE
|
Black Box, Corp.
Bourns, Inc.
Vishay Intertechnology, Inc.
Samsung Semiconductor Co., Ltd.
3M Company
|
| FQI9N15 FQB9N15 FQI9N15TU |
150V N-Channel QFET
150V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| STP40NS15 |
N-CHANNEL 150V 0.042 OHM 40A TO-220 MESH OVERLAY MOSFET
N-CHANNEL 150V - 0.042ohm - 40A TO-220 MESH OVERLAY MOSFET
N-CHANNEL 150V - 0.042ohm - 40A TO-220 MESH OVERLAY⑩ MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| IRFB23N15D IRFSL23N15D |
Power MOSFET(Vdss=150V/ Rds(on)max=0.090ohm/ Id=23A)
150V,23A,SMPS MOSFET for High frequency DC-DC converters(150V,23A,开关电MOS场效应管，用于高DC-DC变换 50V3A条，开关电源的MOSFET的高频率DC - DC转换器（50V3A条，开关电源马鞍山场效应管，用于高频的DC - DC变换器）
|
International Rectifier, Corp.
|
| HUF75829D3S HUF75829D3 HUF75829D3ST |
18A, 150V, 0.110 Ohm, N-Channel,UltraFET Power MOSFET
18A, 150V, 0.110 Ohm, N-Channel, UltraFETPower MOSFET
18A, 150V, 0.110 Ohm, N-Channel, UltraFET Power MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQAF28N15 |
150V N-Channel MOSFET 22 A, 150 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
